complementary power transistors dpak for surface mount applications . . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ? lead formed for surface mount application in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel for surface mount (at4o suffix) ? electrically similar to popular d44h/d45h series ? low collector emitter saturation voltage e v ce(sat) = 1.0 volt max @ 8.0 amperes ? fast switching speeds ? complementary pairs simplifies designs ??????????????????????? ??????????????????????? maximum ratings ????????????? ????????????? rating ???? ???? symbol ?????? ?????? d44h11 or d45h11 ??? ??? unit ????????????? ????????????? collectoremitter voltage ???? ???? v ceo ?????? ?????? 80 ??? ??? vdc ????????????? ????????????? emitterbase voltage ???? ???? v eb ?????? ?????? 5 ??? ??? vdc ????????????? ? ??????????? ? ????????????? collector current e continuous peak ???? ? ?? ? ???? i c ?????? ? ???? ? ?????? 8 16 ??? ? ? ? ??? adc ????????????? ? ??????????? ? ? ??????????? ? ????????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ? ?? ? ???? p d ?????? ? ???? ? ? ???? ? ?????? 20 0.16 ??? ? ? ? ? ? ? ??? watts w/ c ????????????? ? ??????????? ? ????????????? total power dissipation (1) @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????? ? ???? ? ?????? 1.75 0.014 ??? ? ? ? ??? watts w/ c ????????????? ? ??????????? ? ????????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ?????? ? ???? ? ?????? 55 to 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ????????????? ????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ???? ???? r q jc ?????? ?????? 6.25 ??? ??? c/w ????????????? ????????????? thermal resistance, junction to ambient (1) ???? ???? r q ja ?????? ?????? 71.4 ??? ??? c/w ????????????? ????????????? lead temperature for soldering ???? ???? t l ?????? ?????? 260 ??? ??? c (1) these ratings are applicable when surface mounted on the minimum pad size recommended. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 5 1 publication order number: mjd44h11/d mjd44h11 mjd45h11 case 369a13 silicon power transistors 8 amperes 80 volts 20 watts *on semiconductor preferred device case 36907 minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm * npn pnp *
mjd44h11 mjd45h11 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 30 ma, i b = 0) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 80 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v ceo , v be = 0) ????? ? ??? ? ????? i ces ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m a ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 5 vdc) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 50 ??? ? ? ? ??? m a ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????? ??????????????????? collectoremitter saturation voltage (i c = 8 adc, i b = 0.4 adc) ????? ????? v ce(sat) ???? ???? e ??? ??? e ???? ???? 1 ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 8 adc, i b = 0.8 adc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (v ce = 1 vdc, i c = 2 adc) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 60 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (v ce = 1 vdc, i c = 4 adc) ????? ? ??? ? ????? ???? ? ?? ? ???? 40 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjd44h11 mjd45h11 ????? ? ??? ? ????? c cb ???? ? ?? ? ???? e e ??? ? ? ? ??? 130 230 ???? ? ?? ? ???? e e ??? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjd44h11 mjd45h11 ????? ? ??? ? ? ??? ? ????? f t ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 50 40 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? mhz ??????????????????? ??????????????????? switching times ????? ????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????????????? ? ????????????????? ? ??????????????????? delay and rise times (i c = 5 adc, i b1 = 0.5 adc) mjd44h11 mjd45h11 ????? ? ??? ? ????? t d + t r ???? ? ?? ? ???? e e ??? ? ? ? ??? 300 135 ???? ? ?? ? ???? e e ??? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? storage time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h11 mjd45h11 ????? ? ??? ? ? ??? ? ????? t s ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 500 500 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ??????????????????? fall time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h11 mjd45h11 ????? ? ??? ? ????? t f ???? ? ?? ? ???? e e ??? ? ? ? ??? 140 100 ???? ? ?? ? ???? e e ??? ? ? ? ??? ns
mjd44h11 mjd45h11 http://onsemi.com 3 t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), effective transient thermal r q jc(t) = r(t) r q jc r q jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) 0.7 figure 1. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.1 0.02 0.01 0.05 i c , collector current (amp) 20 1 v ce , collector-emitter voltage (volts) 0.02 3 100 2 0.5 5 0.1 thermal limit @ t c = 25 c wire bond limit 5 7 20 70 10 100 m s dc 0.05 0.3 1 3 10 50 30 figure 2. maximum forward bias safe operating area 1ms 500 m s 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c figure 3. power derating t c t a surface mount
mjd44h11 mjd45h11 http://onsemi.com 4 i c , collector current (amps) i c , collector current (amps) i c , collector current (amps) h fe , dc current gain v ce = 4 v t j = 125 c 25 c -40 c 1000 0.1 figure 4. mjd44h11 dc current gain 10 110 100 figure 5. mjd45h11 dc current gain figure 6. mjd44h11 current gain versus temperature figure 7. mjd45h11 current gain versus temperature i c /i b = 10 t j = 25 c 0.1 figure 8. mjd44h11 onvoltages i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 t j = 25 c figure 9. mjd45h11 onvoltages v ce = 1 v i c /i b = 10 t j = 25 c 0.1 i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 1 10 h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v i c , collector current (amps) h fe , dc current gain v ce = 4 v 1000 0.1 10 110 100 t j = 25 c 1 v t j = 125 c 25 c -40 c h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v v be(sat) v ce(sat) v be(sat) v ce(sat)
mjd44h11 mjd45h11 http://onsemi.com 5 package dimensions case 369a13 issue aa dpak d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4
mjd44h11 mjd45h11 http://onsemi.com 6 package dimensions case 36907 issue m dpak notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd44h11 mjd45h11 http://onsemi.com 7 notes
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